Field Effect Transistor 600V Power Transistors Ipaw60r600CE

Field Effect Transistor 600V Power Transistors Ipaw60r600CE

Product Description: IPAW60R600CE >>> >Contact Us < Our Services: Company Information: Packaging & Shipping: Our Certifi

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Basic Info

Model NO.	IPAW60R600CE
Material	Silicon
Product Category	Mosfet
Lead Free Status	RoHS Compliant
Transistor Polarity	N-Channel
Installation Style	Through Hole
Technology	Si
Product Type	Mosfet
Shipping by	DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
Specification	Number of channels: 1 Channel

Product Description

Product Description:

IPAW60R600CE >>> >Contact Us <

Id - Continuous Drain Current:	10.3 A
Rds On - Drain-Source Resistance:	1.4 Ohms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	20.5 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	82 W
Channel Mode:	Enhancement

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Field Effect Transistor 600V Power Transistors Ipaw60r600CE

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