Irfb4229 Irfb4229pbf Mosfet Field Effect Transistor
Product Attributes Related ProductsPackage TypeApplication FieldsCompany InformationOur ExihibitonFAQ
Description
Basic Info
Model NO. | IRFB4229PBF |
Structure | Planar |
Encapsulation Structure | Chip Transistor |
Power Level | High Power |
Material | Silicon |
Polarity/Channel Type | N-Channel |
Product Number | Irfb4229pbf |
Condition | Brand Newand Original |
Shipping by | DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post |
Category | Transistors |
Technology | Mosfet |
Transport Package | Tube |
Specification | iron and plastic |
Origin | Chn |
Product Description
Product Attributes
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 46mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 330W (Tc) |
Related ProductsPackage TypeApplication FieldsCompany InformationOur ExihibitonFAQ
Our Contact
Send now