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Irfb4229 Irfb4229pbf Mosfet Field Effect Transistor

Irfb4229 Irfb4229pbf Mosfet Field Effect Transistor

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Description

Basic Info
Model NO. IRFB4229PBF
Structure Planar
Encapsulation Structure Chip Transistor
Power Level High Power
Material Silicon
Polarity/Channel Type N-Channel
Product Number Irfb4229pbf
Condition Brand Newand Original
Shipping by DHL\UPS\FedEx\EMS\HK Postdhl\UPS\FedEx\EMS\HK Post
Category Transistors
Technology Mosfet
Transport Package Tube
Specification iron and plastic
Origin Chn
Product Description

Product Attributes

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

46mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Vgs (Max)

±30V

FET Feature

-

Power Dissipation (Max)

330W (Tc)


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Irfb4229 Irfb4229pbf Mosfet Field Effect Transistor

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